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Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge of the system clock (CLK) Data I/O transitions on both edges of data strobe (DQS) DQS is edge-aligned with data for READs; center-aligned with data for WRITEs Data mask (DM) for write masking only VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V 15.6us refresh interval Auto & Self refresh 2.5V I/O (SSTL_2 compatible)
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