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JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS,DQS ); DQS can be disabled for single-ended data strobe operation. On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 3, 4, 5, 6, 7, 8, 9 Additive Latency: 0, 1, 2, 3, 4, 5, 6, 7 Burst Type : Sequential and Interleave Burst Length : 4, 8 All inputs except data & DM are sampled at the rising edge of the system clock(CLK) Data I/O transitions on both edges of data strobe (DQS) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only Off-Chip-Driver (OCD) impedance adjustment On-Die-Termination for better signal quality Special function support - 50/ 75/ 150 ohm ODT - High Temperature Self refresh rate enable - Duty Cycle Corrector - Partial Array Self Refresh (PASR) Auto & Self refresh Refresh cycle : - 8192 cycles/64ms (7.8μ s refresh interval) at 0 ℃ ≦ TC ≦ +85 ℃ - 8192 cycles/32ms (3.9μ s refresh interval) at +85 ℃ ＜ TC ≦ +95 ℃ SSTL_18 interface If tCK < 1.875ns, the device can not support Write with Auto Precharge function.
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